Title :
GaN HEMTs grown on sapphire substrates for microwave power amplification
Author :
Wu, Y.-F. ; Thibeault, B.J. ; Xu, J.J. ; York, R.A. ; Keller, S. ; Keller, B.P. ; Mishra, U.K.
Author_Institution :
WiTech, Goleta, CA, USA
Abstract :
In this paper, we present development of large-periphery GaN-HEMTs-on-sapphire with output power up to 7.6 W. We also present initial demonstration of GaN-based 3-9 GHz wide bandwidth amplifiers with 9-12 dB linear gain and 3.2 W output power.
Keywords :
III-V semiconductors; gallium compounds; microwave field effect transistors; microwave power amplifiers; microwave power transistors; power HEMT; wide band gap semiconductors; wideband amplifiers; 3 to 9 GHz; 3.2 W; 7.6 W; 9 to 12 dB; Al/sub 2/O/sub 3/; GaN; GaN HEMT; microwave power amplification; sapphire substrate; wideband amplifier; Bonding; Broadband amplifiers; Energy management; Gallium nitride; HEMTs; MODFETs; Power amplifiers; Power generation; Thermal conductivity; Thermal management;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806320
