Title :
First vertical PNP bipolar transistor structure on diamond
Author :
Aleksov, A. ; Denisenko, A. ; Kohn, E.
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
Abstract :
The application of nitrogen doped diamond in electronics is demonstrated by fabricating pnp bipolar transistors on diamond with nitrogen doped base for the first time. The transistor structures were fabricated by epitaxial growth on p-type diamond crystal substrate by using boron and nitrogen as the p- and n-dopants respectively, The electrical characteristics and numerical simulation of the transistors taking into account the deep donors are presented.
Keywords :
bipolar transistors; diamond; semiconductor device measurement; semiconductor device models; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; C:N; electrical characteristics; epitaxial growth; numerical simulation; transistor structures; vertical PNP bipolar transistor; Bipolar transistors; Boron; Circuits; Electric breakdown; Electron devices; Material properties; Nitrogen; Semiconductor device breakdown; Temperature; Wide band gap semiconductors;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806322
