Title :
A nanoscale ohmic contact for nanoelectronic devices
Author :
Janes, D.B. ; Andres, R.P. ; Chen, E.-H. ; Chen, N.-P. ; Reifenberger, R. ; Lee, T. ; Jia Liu ; Melloch, M.R. ; Ueng, H.J. ; Woodall, J.M.
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
Abstract :
In this presentation, we report the development and characterization of low-resistance nanometer scale ohmic contacts which provide suitable characteristics for application in nanoelectronic semiconductor devices. The nanocontact structure employs a heterostructure comparable to that used in previous large-area studies of a low resistance, non-alloyed ohmic contact, namely a thin (2-10 nm) cap layer of low-temperature grown GaAs (LTG:GaAs) on a heavily doped n-type GaAs layer.
Keywords :
III-V semiconductors; gallium arsenide; nanotechnology; ohmic contacts; GaAs; heavily doped n-type GaAs layer; heterostructure; low-temperature grown GaAs cap layer; nanoelectronic semiconductor device; nanoscale ohmic contact; nonalloyed ohmic contact; Contact resistance; Current measurement; Density measurement; Electrical resistance measurement; Gallium arsenide; Gold; Nanoscale devices; Ohmic contacts; Surface resistance; Voltage;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806323
