Ridge-type InGaAs quantum wire field effect transistor with negative differential resistance

Author

Kim, S.J. ; Sugaya, T. ; Ogura, M. ; Sugiyama, Y. ; Tomizawa, K.

Author_Institution

Electrotech. Lab., Ibaraki, Japan

fYear

1999

fDate

23-23 June 1999

Firstpage

66

Lastpage

67

Abstract

In this paper, we firstly report the negative differential resistance (NDR) characteristics in ridge-type InGaAs/InAlAs quantum wire field-effect transistor (QWIR-FET) with the /spl delta/-doped layer grown on InP [100] patterned substrate by molecular beam epitaxy. The drain voltage for the onset of NDR and peak-to-valley current ratio (PVCR) are significantly improved by employing QWIR and by decreasing the distance between a source and drain.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; negative resistance devices; quantum well devices; semiconductor quantum wires; /spl delta/-doped layer; InGaAs ridge-type quantum wire field effect transistor; InGaAs-InAlAs; Schottky gate; drain voltage; molecular beam epitaxy; negative differential resistance; peak-to-valley current ratio; Energy consumption; FETs; Indium gallium arsenide; Indium phosphide; Laboratories; Low voltage; Molecular beam epitaxial growth; Substrates; Temperature; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1999 57th Annual

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-5170-3

Type

conf

DOI

10.1109/DRC.1999.806326

Filename

806326