DocumentCode
3336023
Title
A novel lateral n-i-p-i structure heterojunction quantum wire transistor
Author
Yoh, K. ; Takabayashi, S.
Author_Institution
Res. Center for Interface Quantum Electron., Hokkaido Univ., Sapporo, Japan
fYear
1999
fDate
23-23 June 1999
Firstpage
72
Lastpage
73
Abstract
Reports fabrication of a high performance (AlGa)As-GaAs heterojunction quantum wire transistors in lateral n-i-p-i configuration by utilizing the selective doping mechanism of amphoteric silicon dopant on patterned [311]A GaAs substrates for the first time.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; quantum interference devices; semiconductor doping; semiconductor quantum wires; (AlGa)As-GaAs; amphoteric dopant; heterojunction quantum wire transistor; lateral n-i-p-i structure; selective doping mechanism; Doping; Electrostatics; Gallium arsenide; Microscopy; Molecular beam epitaxial growth; Substrates; Transconductance; Voltage; Wet etching; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 1999 57th Annual
Conference_Location
Santa Barbara, CA, USA
Print_ISBN
0-7803-5170-3
Type
conf
DOI
10.1109/DRC.1999.806329
Filename
806329
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