Title :
A novel lateral n-i-p-i structure heterojunction quantum wire transistor
Author :
Yoh, K. ; Takabayashi, S.
Author_Institution :
Res. Center for Interface Quantum Electron., Hokkaido Univ., Sapporo, Japan
Abstract :
Reports fabrication of a high performance (AlGa)As-GaAs heterojunction quantum wire transistors in lateral n-i-p-i configuration by utilizing the selective doping mechanism of amphoteric silicon dopant on patterned [311]A GaAs substrates for the first time.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; quantum interference devices; semiconductor doping; semiconductor quantum wires; (AlGa)As-GaAs; amphoteric dopant; heterojunction quantum wire transistor; lateral n-i-p-i structure; selective doping mechanism; Doping; Electrostatics; Gallium arsenide; Microscopy; Molecular beam epitaxial growth; Substrates; Transconductance; Voltage; Wet etching; Wire;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806329
