DocumentCode :
3336040
Title :
Bridging the price/performance gap between silicon drift and silicon PIN diode detectors
Author :
Hullinger, Derek D. ; Carter, Chris R. ; Smith, Jerry R. ; Decker, Keith W.
Author_Institution :
Moxtek, Inc., Orem, UT, USA
fYear :
2009
fDate :
Oct. 24 2009-Nov. 1 2009
Firstpage :
1800
Lastpage :
1803
Abstract :
Use of silicon drift detectors continues to increase as new XRF applications drive performance improvements beyond existing silicon PIN diode detector capabilities. Recent developments in Si-PIN detectors result in significantly improved performance. This paper describes improvements in spectral resolution, count rate capability, and detection limits in silicon PIN diode detectors. These improvements result in detectors that, for some applications, offer an attractive alternative to silicon drift detectors at a fraction of the cost. This improvement helps bridge the gap between existing silicon PIN diode detector capability and the silicon drift detector (SDD).
Keywords :
p-i-n diodes; silicon radiation detectors; XRF applications; count rate capability; detection limits; silicon PIN diode detector capability; silicon drift detectors; spectral resolution; Detectors; Noise shaping; Nuclear and plasma sciences; Pulse amplifiers; Pulse shaping methods; Signal resolution; Silicon; Telephony; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE
Conference_Location :
Orlando, FL
ISSN :
1095-7863
Print_ISBN :
978-1-4244-3961-4
Electronic_ISBN :
1095-7863
Type :
conf
DOI :
10.1109/NSSMIC.2009.5402192
Filename :
5402192
Link To Document :
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