• DocumentCode
    3336040
  • Title

    Bridging the price/performance gap between silicon drift and silicon PIN diode detectors

  • Author

    Hullinger, Derek D. ; Carter, Chris R. ; Smith, Jerry R. ; Decker, Keith W.

  • Author_Institution
    Moxtek, Inc., Orem, UT, USA
  • fYear
    2009
  • fDate
    Oct. 24 2009-Nov. 1 2009
  • Firstpage
    1800
  • Lastpage
    1803
  • Abstract
    Use of silicon drift detectors continues to increase as new XRF applications drive performance improvements beyond existing silicon PIN diode detector capabilities. Recent developments in Si-PIN detectors result in significantly improved performance. This paper describes improvements in spectral resolution, count rate capability, and detection limits in silicon PIN diode detectors. These improvements result in detectors that, for some applications, offer an attractive alternative to silicon drift detectors at a fraction of the cost. This improvement helps bridge the gap between existing silicon PIN diode detector capability and the silicon drift detector (SDD).
  • Keywords
    p-i-n diodes; silicon radiation detectors; XRF applications; count rate capability; detection limits; silicon PIN diode detector capability; silicon drift detectors; spectral resolution; Detectors; Noise shaping; Nuclear and plasma sciences; Pulse amplifiers; Pulse shaping methods; Signal resolution; Silicon; Telephony; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE
  • Conference_Location
    Orlando, FL
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-3961-4
  • Electronic_ISBN
    1095-7863
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2009.5402192
  • Filename
    5402192