4500 V planar implanted anode p-i-n junction rectifiers in 4H-SiC

SiC has been actively explored for high-temperature, high-voltage power electronics applications because of its wide bandgap, large avalanche electric field and high thermal conductivity. Recently, >5.5 kV epi-grown anode and 3kV aluminum-implanted anode 4H-SiC junction rectifiers have been reported. We also report a 1.1 kV junction rectifier that utilizes a deep boron implant for optimal junction leakage and a shallow Al/C co-implant for emitter injection and ohmic contact. An implanted anode process allows selective doping and hence fabricates planar rectifiers. This paper reports on the design, fabrication and electrical characterization of implanted anode 4H-SiC p-i-n rectifiers made using aluminum/carbon/boron co-implantation designed for 5 kV blocking capability and high-temperature operation.