Organic transistors with low operating voltage and high mobility

Author

Dimitrakopoulos, C.D. ; Purushothaman, S. ; Kymissis, J. ; Callegari, A. ; Neumayer, D.A. ; Duncombe, P.R. ; Laibowitz, R.B. ; Shaw, J.M.

Author_Institution

Div. of Res., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1999

fDate

23-23 June 1999

Firstpage

116

Lastpage

119

Abstract

Thin film transistors (TFT) comprising pentacene as the semiconductor layer and an amorphous metal oxide gate insulators with a dielectric constant around 16 were fabricated and tested. Field effect mobility values up to 0.6 cm/sup 2/ V/sup -1/ s/sup -1/ with subthreshold slopes up to 0.3 V/decade and current modulation higher than 10/sup 5/ were obtained at operating voltages ranging from 4 to 15 V. TFTs fabricated at room temperature on transparent plastic substrates and exhibiting similar transport characteristics were demonstrated.

Keywords

carrier mobility; low-power electronics; organic semiconductors; thin film transistors; 4 to 15 V; amorphous metal oxide gate insulator; current modulation; dielectric constant; field effect mobility; low voltage operation; organic semiconductor; pentacene; room temperature fabrication; subthreshold slope; thin film transistor; transparent plastic substrate; transport characteristics; Amorphous materials; Dielectric constant; Dielectrics and electrical insulation; Insulator testing; Low voltage; Metal-insulator structures; Pentacene; Semiconductor device testing; Temperature distribution; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1999 57th Annual

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-5170-3

Type

conf

DOI

10.1109/DRC.1999.806343

Filename

806343