DocumentCode
3336293
Title
Room temperature operation of a single electron switch with an electrically formed quantum dot
Author
Dae Hwan Kim ; Dong-Hyuk Chae ; Jong Duk Lee ; Byung-Gook Park
Author_Institution
Seoul Nat. Univ., South Korea
fYear
1999
fDate
23-23 June 1999
Firstpage
134
Lastpage
135
Abstract
Single electron switch based on Coulomb blockade has recently attracted much attention as a candidate for the nanoelectronic device. Moreover, its application to the digital circuit has already been proposed as the SETL (Single Electron Transistor Logic). In this paper, we report the room temperature operation of single electron switches based on Coulomb blockade in a dual-gate MOSFET by further miniaturization of an electrical quantum dot.
Keywords
Coulomb blockade; field effect transistor switches; semiconductor quantum dots; single electron transistors; Coulomb blockade; digital circuit; dual-gate MOSFET; electrical quantum dot; nanoelectronic device; room temperature operation; single electron switch; single electron transistor logic; Electrodes; Electrons; MOSFET circuits; Nanoelectronics; Quantum capacitance; Quantum dots; Switches; Temperature; US Department of Transportation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 1999 57th Annual
Conference_Location
Santa Barbara, CA, USA
Print_ISBN
0-7803-5170-3
Type
conf
DOI
10.1109/DRC.1999.806347
Filename
806347
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