Planar non-volatile memory with single-electron channel fabricated on a hyper-thin SOI film

We have demonstrated the hyper-thin SOI memory device that has both conduction channel and storage islands at the lower gate voltage. It also shows both Coulomb staircase and oscillations at 20 K. By the use of coexistence of memory with Coulomb blockade effects, the Coulomb oscillation phase was well controlled. This will open a way to the robust nano-structure devices, including the functional devices for multi-value memory/logic.