Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature

Author

Dong-Hyuk Chae ; Tae-Sik Yoon ; Dae Hwan Kim ; Jang-Yeon Kwon ; Ki-Bum Kim ; Jong Duk Lee ; Byung-Gook Park

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

1999

fDate

23-23 June 1999

Firstpage

140

Lastpage

141

Abstract

We report unique programming characteristics of a nanocrystal memory cell using a high-density SiGe nanocrystal array incorporated in the gate oxide of a MOSFET. The threshold voltage shift of the nanocrystal memory cell showed multiple step-like saturation behavior with respect to the write time. Capacitive coupling among very closely spaced nanocrystals seems to play a significant role in the tunneling process of single electron from the channel into the nanocrystal.

Keywords

Ge-Si alloys; MOSFET; nanotechnology; quantum interference devices; semiconductor materials; semiconductor storage; MOSFET; SiGe; SiGe nanocrystal array; capacitive coupling; programming dynamics; room temperature operation; single electron memory cell; threshold voltage; tunneling; Dynamic programming; Germanium silicon alloys; MOSFET circuits; Nanocrystals; Silicon germanium; Single electron memory; Space vector pulse width modulation; Temperature; Threshold voltage; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1999 57th Annual

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-5170-3

Type

conf

DOI

10.1109/DRC.1999.806350

Filename

806350