AlAs/sub 0.56/Sb/sub 0.44//In/sub 0.53/Ga/sub 0.47/As doped multi-channel field effect transistors

Summary form only given. Microwave and millimeter wave amplifiers for wireless and space applications need semiconductor devices with high current density and wide gain linearity. Heterostructure-based doped channel field effect transistors (DCFETs) are very promising devices for such applications. In this work, we have grown AlAs/sub 0.56/Sb/sub 0.44//In/sub 0.53/Ga/sub 0.47/As lattice-matched to InP with multiple doped channels using molecular beam epitaxy (MBE) and fabricated DCFETs with variable gate length (0.2 to 1.0 /spl mu/m) on the heterostructure. The multichannel structure is used to achieve a wide gain linearity as well as high current density. In this paper, we present our results of multi-channel DCFETs with variable gate lengths. To the best of our knowledge, these are the first reported results of DCFETs on the AlAsSb/InGaAs material system.