Integration of heterojunction interband tunnel diodes and HFETs for monolithic microwave circuits

Summary form only given. Three terminal devices that exhibit negative differential resistance (NDR) are actively being investigated for future use in high-speed, highly functional integrated circuits. While there is considerable research effort in the area of high-speed digital circuits, research on microwave applications of such devices is not being explored as aggressively. To date, transistors fabricated in the InAlAs-InGaAs lattice-matched to InP material system hold the records for RF performance. In recent years, heterojunction interband tunnel diodes (HITDs) in this same material system have shown excellent NDR behavior with measured peak-to-valley current ratios (PVCR) as high as 144 at room temperature and a corresponding peak current density of 200 A/cm/sup 2/, This makes the InAlAs-InGaAs-InP material system an excellent candidate for high-speed highly functional monolithic microwave integrated circuits. Here, we report on investigations of the integration of a heterojunction interband tunneling FET (HITFET), which consist of a HITD monolithically integrated with a HFET.