Title :
P-channel thin film transistor of microcrystalline silicon directly deposited at 320/spl deg/C
Author :
Chen, Y. ; Pangal, K. ; Sturm, J.C. ; Wagner, S.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
We report the first p-channel thin-film transistor made in directly-deposited microcrystalline silicon (/spl mu/c-Si). The channel silicon is made by plasma-enhanced vapor deposition (PECVD) in a process similar to the deposition of hydrogenated amorphous silicon (a-Si:H). The deposition temperature for the /spl mu/c-Si is 320 /spl deg/C and the highest post-deposition TFT process temperature is 280 /spl deg/C. The p-channel TFT is made possible by the low-temperature deposition of /spl mu/c-Si with near-intrinsic properties. Because making p-channel TFTs of a-Si:H has not been possible to date, the p-channel /spl mu/c-Si TFT represents a breakthrough in low temperature Si TFT technology.
Keywords :
elemental semiconductors; plasma CVD; silicon; thin film transistors; 320 degC; PECVD; Si; deposition temperature; low temperature Si TFT technology; microcrystalline silicon; p-channel thin film transistor; Fabrication; Glass; Performance analysis; Silicon compounds; Thin film transistors; Threshold voltage;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806359
