• DocumentCode
    3336528
  • Title

    A novel sidewall strained-Si channel nMOSFET

  • Author

    Liu, K.C. ; Wang, X. ; Quinones, E. ; Chen, X. ; Chen, X.D. ; Kencke, D. ; Anantharam, B. ; Ray, S.K. ; Oswal, S.K. ; Banerjee, S.K.

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX, USA
  • fYear
    1999
  • fDate
    23-23 June 1999
  • Firstpage
    180
  • Lastpage
    181
  • Abstract
    We report on a new sidewall tensile-strained Si vertical nMOSFET without the use of a conventional relaxed SiGe buffer layer.
  • Keywords
    MOSFET; elemental semiconductors; silicon; Si; sidewall tensile-strained Si channel vertical n-MOSFET; Buffer layers; Charge carrier processes; Electron mobility; Germanium silicon alloys; Lattices; MOSFET circuits; Microelectronics; Silicon germanium; Strain control; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 1999 57th Annual
  • Conference_Location
    Santa Barbara, CA, USA
  • Print_ISBN
    0-7803-5170-3
  • Type

    conf

  • DOI
    10.1109/DRC.1999.806364
  • Filename
    806364
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3336528