Title :
Transparent-substrate (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P light-emitting diodes with thin active regions
Author :
Gardner, N.F. ; Chui, H.C. ; Chen, E.I. ; Krames, M.R. ; Huang, J.-W. ; Kish, F.A. ; Stockman, S.A. ; Kocot, C.P. ; Tan, T.S. ; Moll, N.
Author_Institution :
Div. of Optoelectron., Hewlett-Packard Co., San Jose, CA, USA
Abstract :
We describe record performance (both external quantum efficiency and luminous efficiency) for cubic-shaped light emitting diodes (LEDs) emitting in the yellow-to-red portion of the visible spectrum. Amber (peak wavelength of 590 nm) and red (630 nm) transparent-substrate (TS) (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/GaP wafer-bonded LEDs are demonstrated with luminous efficiencies exceeding 50 lm/W. These devices exhibit a 1.4/spl times/ improvement over the previous state-of-the-art TS AlGaInP LEDs.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P light emitting diode; (AlGa)/sub 0.5/In/sub 0.5/P; 590 nm; 630 nm; amber emission; cubic-shaped LED; external quantum efficiency; luminous efficiency; red emission; transparent substrate; visible spectrum; wafer bonding; Absorption; Doping; Electrons; High intensity discharge lamps; LED lamps; Laboratories; Leakage current; Light emitting diodes; Light sources; Radiative recombination;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806367
