Multi-quantum well GaInNAs/GaAs lasers with low threshold current density grown by MOCVD

Author

Cheng, J. ; Li, N.Y. ; Hains, C.P. ; Yang, K.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

fYear

1999

fDate

23-23 June 1999

Firstpage

192

Lastpage

193

Abstract

This paper reports a significant improvement in the performance of MOCVD-grown Ga(1-x)In/sub x/N/sub y/As/sub 1-y/GaAs lasers. Using a new MOCVD regrowth technique, multi-quantum well edge-emitting lasers with x=0.3 and y/spl sim/0.3-0.4% have been achieved, with lasing wavelengths in the 1.15-1.19 /spl mu/m regime and threshold current density as low as /spl sim/600-700 A/cm/sup 2/, which is the lowest for any MOCVD-grown devices. Ridge-waveguide lasers as well as planar broad stripe lasers defined by the selective lateral wet oxidation of an Al/sub 0.98/Ga/sub 0.02/As layer have been fabricated.

Keywords

III-V semiconductors; MOCVD coatings; gallium arsenide; indium compounds; quantum well lasers; 1.15 to 1.19 micron; GaInNAs-GaAs; GaInNAs/GaAs multi-quantum well laser; MOCVD growth; edge emitting laser; planar broad stripe laser; ridge waveguide laser; selective lateral wet oxidation; threshold current density; Gallium arsenide; Gas lasers; MOCVD; Optical materials; Optical pulses; Semiconductor materials; Substrates; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1999 57th Annual

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-5170-3

Type

conf

DOI

10.1109/DRC.1999.806368

Filename

806368