TRAPPISTe Pixel Sensor with 2μm SOI technology

Author

Martin, Elena ; Cortina, Eduardo ; Yee, Lawrence Soung ; Renaux, Christian ; Flandre, Denis

Author_Institution

CP3 Center for Particle Phys. & Phenomenology, Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium

fYear

2009

fDate

Oct. 24 2009-Nov. 1 2009

Firstpage

1692

Lastpage

1695

Abstract

TRAPPISTe-1 (Tracking Particle for Physics Instrumentation in SOI Technology) is a R&D project for the study of the feasibility to build a Monolithic Active Pixel Sensor (MAPS) with Silicon On Insulator (SOI). In this paper we present the first prototype of this series of sensors. This first prototype has been build with a 2 μm technology in Electronic Engineer Department SOI production facility in Louvain-la-Neuve. Also additional measurements of a SOI diode detector have been performed, which has been fabricated usign the same technology process, to study the different bias possibilities in order to decrease the strength of back gate effect.

Keywords

monolithic integrated circuits; readout electronics; semiconductor counters; silicon-on-insulator; MAPS; SOI diode detector; SOI technology; TRAPPIST_e pixel sensor; Tracking Particle for Physics Instrumentation in SOI Technology; back gate effect; monolithic active pixel sensor; silicon on insulator technology; Design engineering; Envelope detectors; Instruments; Insulation life; Particle tracking; Performance evaluation; Physics; Production facilities; Prototypes; Silicon on insulator technology; SOI; back gate effect; detector; pixel;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE

Conference_Location

Orlando, FL

ISSN

1095-7863

Print_ISBN

978-1-4244-3961-4

Electronic_ISBN

1095-7863

Type

conf

DOI

10.1109/NSSMIC.2009.5402237

Filename

5402237