• DocumentCode
    3336878
  • Title

    200 mm silicon wafer processing for large area strip detectors

  • Author

    Christophersen, Marc ; Phlips, Bernard F.

  • Author_Institution
    U.S. Naval Res. Lab., Washington, DC, USA
  • fYear
    2009
  • fDate
    Oct. 24 2009-Nov. 1 2009
  • Firstpage
    1649
  • Lastpage
    1652
  • Abstract
    We developed large silicon single-sided strip detectors made of 200 mm float-zone Si wafers. The single-sided silicon strip detectors have an effective active area of 156 cm2 and 725 ¿m in thickness and were fully depleted. Basic performance was measured using Am-241 and Co-57 sources. The leakage current varied from strip to strip due to some contaminations during the processing.
  • Keywords
    elemental semiconductors; leakage currents; semiconductor counters; semiconductor technology; silicon; Am-241 radioactive source; Co-57 radioactive source; Si; float zone silicon wafers; large area strip detectors; leakage current; silicon wafer processing; single sided strip detectors; size 200 mm; Conductivity; Detectors; Fabrication; Laboratories; Lithography; Pediatrics; Pollution measurement; Semiconductor diodes; Silicon; Strips;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE
  • Conference_Location
    Orlando, FL
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-3961-4
  • Electronic_ISBN
    1095-7863
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2009.5402245
  • Filename
    5402245
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3336878