Title :
Porous silicon as an inherent surface enlarging layer for improved electrode performance in stimulation and recording applications
Author :
Bengtsson, Martin ; Wallman, Lars ; Drott, Johan ; Laurell, Thomas
Author_Institution :
Dept. of Electr. Meas., Lund Inst. of Technol., Sweden
fDate :
29 Oct-1 Nov 1998
Abstract :
The performance of doped silicon and porous silicon as a new electrode material in neurophysiological applications is investigated. By increasing the surface area of adopted silicon region through anodisation in hydrofluoric acid it was found that the impedance parameters of the electrode were considerably improved. Impedance spectra of bare silicon electrodes, porous electrodes and platinum electroplated porous silicon electrodes are presented. It was found that porous silicon electrodes display a 2.5 times higher capacitance and the platinum electroplated porous silicon electrode displayed a 5 times higher capacitance when compared to the corresponding planar doped silicon electrode
Keywords :
bioelectric phenomena; biomedical electrodes; neuromuscular stimulation; porous semiconductors; silicon; HCl; Pt; Si; bare silicon electrodes; impedance parameters; impedance spectra; improved electrode performance; inherent surface enlarging layer; neural recording; neural stimulation; planar doped silicon electrode; platinum electroplated porous silicon electrodes; Capacitance; Current density; Electrodes; Etching; Fabrication; Gold; Hafnium; Platinum; Silicon; Surface impedance;
Conference_Titel :
Engineering in Medicine and Biology Society, 1998. Proceedings of the 20th Annual International Conference of the IEEE
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-5164-9
DOI :
10.1109/IEMBS.1998.747055