The effect of Ge doping on p-type higher manganese silicides (HMS)

Author

Aoyama, I. ; Kaibe, H. ; Sano, S. ; Solomkin, F.Yu. ; Eremin, I.S. ; Fedorov, M.I. ; Samunin, A.Yu. ; Vedernikov, M.V. ; Yamamura, Y. ; Tsuji, T.

Author_Institution

Res. Center, Komatsu Ltd., Hiratsuka, Japan

fYear

2002

fDate

25-29 Aug. 2002

Firstpage

90

Lastpage

93

Abstract

Ge doped HMS was prepared by Bridgman method. It was reconfirmed that the electrical conductivity increases depending on the amount of doped Ge and the changes in textures of HMS appeared. The result of powder X-ray diffraction patterns show the increase of diffraction from MnSi, and by Reitvelt analysis it is found that the volume occupational ratio of MnSi increases. MnSi is well known a p-type metal which has carriers of the order of 10²²/cm³. It is supposed that MnSi provides additional p-type carriers then all phenomena are consistent.

Keywords

X-ray diffraction; electrical conductivity; germanium; manganese compounds; semiconductor materials; texture; Bridgman method; Ge doping effect; MnSi:Ge; X-ray diffraction; electrical conductivity; p-type higher manganese silicides; texture; Argon; Atmosphere; Doping; Etching; Lattices; Manganese; Silicides; Temperature; Thermal conductivity; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on

Print_ISBN

0-7803-7683-8

Type

conf

DOI

10.1109/ICT.2002.1190272

Filename

1190272