Title :
The effect of Ge doping on p-type higher manganese silicides (HMS)
Author :
Aoyama, I. ; Kaibe, H. ; Sano, S. ; Solomkin, F.Yu. ; Eremin, I.S. ; Fedorov, M.I. ; Samunin, A.Yu. ; Vedernikov, M.V. ; Yamamura, Y. ; Tsuji, T.
Author_Institution :
Res. Center, Komatsu Ltd., Hiratsuka, Japan
Abstract :
Ge doped HMS was prepared by Bridgman method. It was reconfirmed that the electrical conductivity increases depending on the amount of doped Ge and the changes in textures of HMS appeared. The result of powder X-ray diffraction patterns show the increase of diffraction from MnSi, and by Reitvelt analysis it is found that the volume occupational ratio of MnSi increases. MnSi is well known a p-type metal which has carriers of the order of 1022/cm3. It is supposed that MnSi provides additional p-type carriers then all phenomena are consistent.
Keywords :
X-ray diffraction; electrical conductivity; germanium; manganese compounds; semiconductor materials; texture; Bridgman method; Ge doping effect; MnSi:Ge; X-ray diffraction; electrical conductivity; p-type higher manganese silicides; texture; Argon; Atmosphere; Doping; Etching; Lattices; Manganese; Silicides; Temperature; Thermal conductivity; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
Print_ISBN :
0-7803-7683-8
DOI :
10.1109/ICT.2002.1190272
