Title :
Optimal doping profile for laser-induced diode linking in wafer-scale-integration
Author :
Fang, P. ; Sun, M.-I. ; Chen, T.M.
Author_Institution :
Dept. of Electr. Eng., South Florida Univ., Tampa, FL, USA
Abstract :
The optimum doping profile for the minimum resistance of a laser-induced diode link is studied by using the calculus of variations and the method of Lagrange multipliers. It is shown that the uniform distribution of the carriers in the link gives the minimum link resistance. It is also found that, in a practical laser-induced diode link with Gaussian carrier distribution, the resultant link resistance can approach the optimum resistance value if the carrier diffusion time is chosen properly. If the laser pulse is too short, the link resistance can be much larger than the optimum value. On the other hand, if the duration is too long, the link resistance does not change significantly
Keywords :
VLSI; carrier lifetime; doping profiles; integrated circuit technology; laser beam applications; semiconductor doping; Gaussian carrier distribution; Lagrange multipliers; WSI; carrier diffusion time; laser-induced diode linking; minimum link resistance; optimum doping profile; uniform carriers distribution; variations calculus; wafer-scale-integration; Calculus; Diodes; Doping profiles; Equations; Joining processes; Lagrangian functions; Optical pulses; Semiconductor device modeling; Semiconductor process modeling; Sun;
Conference_Titel :
Southeastcon '89. Proceedings. Energy and Information Technologies in the Southeast., IEEE
Conference_Location :
Columbia, SC
DOI :
10.1109/SECON.1989.132656
