The study for the mechanism on the noble thermoelectric properties of the amorphous Si-Ge-Au thin films

In order to disclose the important parameter from factors which affected to thermoelectric properties of the amorphous Si-Ge-Au thin films, annealing of samples were repeated with temperature range between room temperature and 1000 K. Electrical resistivity was stabilized in whole temperature range by only one thermal annealing cycle. On the other hand, thermoelectric power was not stabilized in whole temperature range even after several annealing cycles. Electrical resistivity and thermoelectric power of the amorphous Si-Ge-Au thin films could be affected by different parameters of amorphous structure such as dangling bonds, bond angle and interatomic distance. Further, improvement of the thermoelectric properties can be achieved with controlling the annealing temperature range and number of annealing cycle which affects to amorphous parameters.