DocumentCode
3337646
Title
Thermoelectric properties of mixed layered compounds TiS2-xSex (0≤×≤2)
Author
Hirota, Y. ; Ichiyama, K. ; Hosoi, N. ; Oikawa, Y. ; Miyahara, Y. ; Kulbachinskii, V.A. ; Ozaki, H.
Author_Institution
Dept. of Electr., Electron. & Comput. Eng., Waseda Univ., Tokyo, Japan
fYear
2002
fDate
25-29 Aug. 2002
Firstpage
159
Lastpage
162
Abstract
Seebeck coefficients (S) were measured in TiS2-xSex for 0≤×≤2 in the temperature range 77-285 K. For TiS2 (x=0), S was negative and its absolute value increased linearly with temperature, attaining to 170∼250μ V/K, depending on individual samples, at room temperature. With increasing x, the absolute value of temperature coefficient (TC) of S decreased in the temperature region T ≥ 170K. At x ≈ 1.5, TC was reduced to zero and changed its sign for larger x. This behavior is explained by the fact that the valence band of this system consists of S 3p and/or Se 4p bands and shifts upward with increasing x. For TiSe2 (x=2), S became positive for T ≥ 270K due to the increase in the effect of valence band with increasing temperature. The charge density wave (CDW) transition at 200K in TiSe2 opens the CDW gap and pushes down the lower edge of CDW gap with decreasing temperature. Below 150K, S is controlled by the upper CDW band consisting of Ti 3d band. Thermoelectric behavior of this system can be totally explained by the above band picture. The present experiments suggest a possibility of raising S in TiS2 by a substitution for Ti and by an itercalation to modulate the 3d band and to control the Fermi level.
Keywords
Seebeck effect; charge density waves; semiconductor materials; thermoelectric power; titanium compounds; valence bands; 77 to 285 K; CDW gap; CDW transition; Seebeck coefficient; TiS2-xSex; charge density wave; composition dependence; mixed layered compounds; temperature dependence; thermoelectric properties; valence band; Conductivity; Electric resistance; Electric variables measurement; Electrical resistance measurement; Power measurement; Superconducting transition temperature; Temperature dependence; Temperature distribution; Temperature measurement; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
Print_ISBN
0-7803-7683-8
Type
conf
DOI
10.1109/ICT.2002.1190289
Filename
1190289
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