DocumentCode
3337666
Title
Synthesis and sintering of ZrNiSn thermoelectric compounds
Author
Shen, Q. ; Zhang, L.M. ; Chen, L.D. ; Goto, T. ; Hirai, T.
Author_Institution
State Key Lab of Adv. Technol. for Mater. Synthesis & Process., Wuhan Univ. of Technol., China
fYear
2002
fDate
25-29 Aug. 2002
Firstpage
166
Lastpage
169
Abstract
In contrast to the commonly used arc melting method, samples in the present paper were prepared by the solid-state reaction from element powders at 1173K under a flowing argon atmosphere for 4-7 days. The constituent phases and the element compositions were determined and showing that samples were of single phase and stoichiometric. ZrNiSn powder was then consolidated by using the spark plasma sintering technique. The effect of sintering temperature and holding time on the density was discussed. It is found that, dense ZrNiSn compounds with fine grain size and homogeneous microstructure were achieved under the condition of 1123K-40MPa-25min.
Keywords
density; grain size; narrow band gap semiconductors; nickel compounds; plasma materials processing; sintering; thermoelectricity; tin compounds; zirconium compounds; 1173 K; ZrNiSn; density; element powders; flowing Ar atmosphere; grain size; half-Heusler compounds; holding time; homogeneous microstructure; narrow band gap semiconductors; sintering; sintering temperature; solid-state reaction; spark plasma sintering; thermoelectric compounds; Argon; Atmosphere; Grain size; Microstructure; Plasma density; Plasma temperature; Powders; Solid state circuits; Sparks; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
Print_ISBN
0-7803-7683-8
Type
conf
DOI
10.1109/ICT.2002.1190291
Filename
1190291
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