• DocumentCode
    3337666
  • Title

    Synthesis and sintering of ZrNiSn thermoelectric compounds

  • Author

    Shen, Q. ; Zhang, L.M. ; Chen, L.D. ; Goto, T. ; Hirai, T.

  • Author_Institution
    State Key Lab of Adv. Technol. for Mater. Synthesis & Process., Wuhan Univ. of Technol., China
  • fYear
    2002
  • fDate
    25-29 Aug. 2002
  • Firstpage
    166
  • Lastpage
    169
  • Abstract
    In contrast to the commonly used arc melting method, samples in the present paper were prepared by the solid-state reaction from element powders at 1173K under a flowing argon atmosphere for 4-7 days. The constituent phases and the element compositions were determined and showing that samples were of single phase and stoichiometric. ZrNiSn powder was then consolidated by using the spark plasma sintering technique. The effect of sintering temperature and holding time on the density was discussed. It is found that, dense ZrNiSn compounds with fine grain size and homogeneous microstructure were achieved under the condition of 1123K-40MPa-25min.
  • Keywords
    density; grain size; narrow band gap semiconductors; nickel compounds; plasma materials processing; sintering; thermoelectricity; tin compounds; zirconium compounds; 1173 K; ZrNiSn; density; element powders; flowing Ar atmosphere; grain size; half-Heusler compounds; holding time; homogeneous microstructure; narrow band gap semiconductors; sintering; sintering temperature; solid-state reaction; spark plasma sintering; thermoelectric compounds; Argon; Atmosphere; Grain size; Microstructure; Plasma density; Plasma temperature; Powders; Solid state circuits; Sparks; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
  • Print_ISBN
    0-7803-7683-8
  • Type

    conf

  • DOI
    10.1109/ICT.2002.1190291
  • Filename
    1190291