Title :
Characteristics of broadband InP HFET millimeter-wave amplifiers and their applications in radioastronomy receivers
Author :
Pospieszalski, Marian W. ; Wollack, Edward J.
Author_Institution :
Nat. Radio Astron. Obs., Charlottesville, VA, USA
Abstract :
Developments in ultra-low-noise, heterostructure field-effect transistor (HFETs) receivers for frequencies up to 110 GHz are reviewed. Design and examples of the realization of InP HFET receivers in the frequency range 26 to 110 GHz are described. Applications to ultra-low-noise radio astronomy receivers, as well as broadband continuum radiometers, are discussed
Keywords :
III-V semiconductors; cryogenic electronics; indium compounds; millimetre wave amplifiers; millimetre wave circuits; radioastronomy; radiometers; wideband amplifiers; 26 to 110 GHz; III-V semiconductors; InP; broadband HFET millimeter-wave amplifiers; broadband continuum radiometers; radioastronomy receivers; ultra-low-noise receivers; Broadband amplifiers; Frequency; HEMTs; Indium phosphide; MODFETs; Millimeter wave transistors; Radio astronomy; Radiofrequency amplifiers; Radiometers; Receivers;
Conference_Titel :
Millimeter Waves, 1997 Topical Symposium on
Conference_Location :
Kanagawa
Print_ISBN :
0-7803-3887-1
DOI :
10.1109/TSMW.1997.702491
