DocumentCode :
3338192
Title :
Effect of electron concentration on the thickness dependences of the thermoelectric properties of PbTe quantum wells
Author :
Rogacheva, E.I. ; Nashchekina, O.N. ; Tavrina, T.V. ; Volobuev, V.V. ; Us, M.A. ; Dresselhaus, M.S. ; Cronin, S.B.
Author_Institution :
Kharkov Polytech. Inst., Nat. Tech. Univ., Kharkov, Ukraine
fYear :
2002
fDate :
25-29 Aug. 2002
Firstpage :
280
Lastpage :
283
Abstract :
Oscillations were detected in the dependences of the thermoelectric properties (electrical conductivity, thermoelectric power, the Hall coefficient, charge carrier mobility, and power factor) on the PbTe layer thickness d (d=2-200 nm) in [001] KCl/PbTe/EuS quantum wells. The existence of oscillations as a function of d is attributed to quantum size effects, which manifest themselves in PbTe quantum wells at sufficiently small d. An increase in electron concentration in PbTe quantum wells leads to a more distinct manifestation of the oscillations, a shift of the extrema points as well as to an enhancement of the power factor.
Keywords :
Hall effect; IV-VI semiconductors; carrier mobility; electrical conductivity; electron density; lead compounds; oscillations; semiconductor quantum wells; size effect; thermoelectric power; 2 to 200 nm; Hall coefficient; KCl-PbTe-EuS; PbTe quantum wells; charge carrier mobility; electrical conductivity; electron concentration; oscillations; power factor; quantum size effects; thermoelectric power; thermoelectric properties; thickness dependence; Charge carrier mobility; Electrons; Hafnium; Materials science and technology; Optical films; Optical surface waves; Quantization; Reactive power; Semiconductor thin films; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
Print_ISBN :
0-7803-7683-8
Type :
conf
DOI :
10.1109/ICT.2002.1190319
Filename :
1190319
Link To Document :
بازگشت