• DocumentCode
    3338218
  • Title

    Stability and efficiency of some amorphous silicon photovoltaic modules

  • Author

    Atmaram, Gobind H. ; Freen, Paul D. ; Mishra, Pravat K. ; Stefanakos, Elias K.

  • Author_Institution
    Florida Solar Energy Center, Cape Canaveral, FL, USA
  • fYear
    1989
  • fDate
    9-12 Apr 1989
  • Firstpage
    1442
  • Abstract
    Amorphous silicon photovoltaic modules from four US manufacturers were tested for their power generation. The modules were exposed in outdoor sunlight over a period of one year. Current-voltage (I- V) curve measurements were made on each module daily with the automated I-V curve tracer. From these measurements, module electrical performance characteristics were determined. It is shown that the power degradation of the amorphous silicon modules tested was 18 to 33% after one-year period of sunlight exposure. The degradation in the voltage parameters is generally lower than in the current parameters, being less than 7% for open-circuit voltage. About half of the degradation in the peak power is due to the degradation of the fill factor. The power output of the modules had nearly stabilized in the first eight months of the sunlight exposures and their stabilized efficiencies were in the range of 2.6 to 4.4%
  • Keywords
    amorphous semiconductors; elemental semiconductors; silicon; solar cells; 2.6 to 4.4 percent; amorphous Si solar cells; automated I-V curve tracer; current parameters; current-voltage curve measurements; efficiency; fill factor degradation; module electrical performance characteristics; open-circuit voltage; outdoor sunlight; peak power degradation; photovoltaic modules; power degradation; stability; voltage parameters; Amorphous silicon; Current measurement; Degradation; Electric variables measurement; Manufacturing; Photovoltaic systems; Solar power generation; Stability; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Southeastcon '89. Proceedings. Energy and Information Technologies in the Southeast., IEEE
  • Conference_Location
    Columbia, SC
  • Type

    conf

  • DOI
    10.1109/SECON.1989.132660
  • Filename
    132660