DocumentCode :
3338218
Title :
Stability and efficiency of some amorphous silicon photovoltaic modules
Author :
Atmaram, Gobind H. ; Freen, Paul D. ; Mishra, Pravat K. ; Stefanakos, Elias K.
Author_Institution :
Florida Solar Energy Center, Cape Canaveral, FL, USA
fYear :
1989
fDate :
9-12 Apr 1989
Firstpage :
1442
Abstract :
Amorphous silicon photovoltaic modules from four US manufacturers were tested for their power generation. The modules were exposed in outdoor sunlight over a period of one year. Current-voltage (I- V) curve measurements were made on each module daily with the automated I-V curve tracer. From these measurements, module electrical performance characteristics were determined. It is shown that the power degradation of the amorphous silicon modules tested was 18 to 33% after one-year period of sunlight exposure. The degradation in the voltage parameters is generally lower than in the current parameters, being less than 7% for open-circuit voltage. About half of the degradation in the peak power is due to the degradation of the fill factor. The power output of the modules had nearly stabilized in the first eight months of the sunlight exposures and their stabilized efficiencies were in the range of 2.6 to 4.4%
Keywords :
amorphous semiconductors; elemental semiconductors; silicon; solar cells; 2.6 to 4.4 percent; amorphous Si solar cells; automated I-V curve tracer; current parameters; current-voltage curve measurements; efficiency; fill factor degradation; module electrical performance characteristics; open-circuit voltage; outdoor sunlight; peak power degradation; photovoltaic modules; power degradation; stability; voltage parameters; Amorphous silicon; Current measurement; Degradation; Electric variables measurement; Manufacturing; Photovoltaic systems; Solar power generation; Stability; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Southeastcon '89. Proceedings. Energy and Information Technologies in the Southeast., IEEE
Conference_Location :
Columbia, SC
Type :
conf
DOI :
10.1109/SECON.1989.132660
Filename :
132660
Link To Document :
بازگشت