DocumentCode
3338346
Title
Phonon and carrier spectrum modification in thermoelectric quantum dot superlattices
Author
Balandin, A.A. ; Lazarenkova, O.L. ; Casian, A.
Author_Institution
Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA
fYear
2002
fDate
25-29 Aug. 2002
Firstpage
302
Lastpage
305
Abstract
Quantum dot superlattices have recently been proposed for thermoelectric applications. The predicted improvement of the thermoelectric figure of merit in such structures should come from the decreased lattice thermal conductivity due to additional boundary scattering and acoustic phonon spectrum modification, as well as change in the carrier transport and density of states. Here we outline a theoretical model to calculate carrier and phonon dispersion in such structures and present results for Ge/Si quantum dot superlattices. We argue that one can tune the mini-band carrier transport and phonon dispersion in such a way that electron-phonon coupling is suppressed. The latter may open up a novel way for the enhancement of the thermoelectric figure of merit.
Keywords
elemental semiconductors; germanium; phonon dispersion relations; semiconductor quantum dots; silicon; thermal conductivity; thermoelectricity; Ge-Si; Ge/Si quantum dot superlattices; acoustic phonon spectrum modification; boundary scattering; carrier dispersion; density of states; lattice thermal conductivity; mini-band carrier transport; phonon dispersion; thermoelectric figure of merit; thermoelectric quantum dot superlattices; Acoustic scattering; Conducting materials; Electrons; Particle scattering; Phonons; Quantum dots; Superlattices; Thermal conductivity; Thermoelectricity; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
Print_ISBN
0-7803-7683-8
Type
conf
DOI
10.1109/ICT.2002.1190325
Filename
1190325
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