DocumentCode :
3338346
Title :
Phonon and carrier spectrum modification in thermoelectric quantum dot superlattices
Author :
Balandin, A.A. ; Lazarenkova, O.L. ; Casian, A.
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA
fYear :
2002
fDate :
25-29 Aug. 2002
Firstpage :
302
Lastpage :
305
Abstract :
Quantum dot superlattices have recently been proposed for thermoelectric applications. The predicted improvement of the thermoelectric figure of merit in such structures should come from the decreased lattice thermal conductivity due to additional boundary scattering and acoustic phonon spectrum modification, as well as change in the carrier transport and density of states. Here we outline a theoretical model to calculate carrier and phonon dispersion in such structures and present results for Ge/Si quantum dot superlattices. We argue that one can tune the mini-band carrier transport and phonon dispersion in such a way that electron-phonon coupling is suppressed. The latter may open up a novel way for the enhancement of the thermoelectric figure of merit.
Keywords :
elemental semiconductors; germanium; phonon dispersion relations; semiconductor quantum dots; silicon; thermal conductivity; thermoelectricity; Ge-Si; Ge/Si quantum dot superlattices; acoustic phonon spectrum modification; boundary scattering; carrier dispersion; density of states; lattice thermal conductivity; mini-band carrier transport; phonon dispersion; thermoelectric figure of merit; thermoelectric quantum dot superlattices; Acoustic scattering; Conducting materials; Electrons; Particle scattering; Phonons; Quantum dots; Superlattices; Thermal conductivity; Thermoelectricity; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
Print_ISBN :
0-7803-7683-8
Type :
conf
DOI :
10.1109/ICT.2002.1190325
Filename :
1190325
Link To Document :
بازگشت