DocumentCode :
3338384
Title :
General approach to study thermo-e.m.f. generated by nonequilibrium carriers in bipolar semiconductors
Author :
Gurevich, Yu.G. ; Lohvinov, Heorhiy ; Titov, Oleg ; Ortiz, Antonio
Author_Institution :
Dept. de Fisica, CINVESTAV-IPN, Mexico City, Mexico
fYear :
2002
fDate :
25-29 Aug. 2002
Firstpage :
314
Lastpage :
316
Abstract :
Linear theory of thermo-e.m.f. is developed for bipolar semiconductors. The role of nonequilibrium carriers of charge appearing due to the presence of the temperature gradient is investigated.
Keywords :
semiconductor-metal boundaries; temperature distribution; thermoelectricity; bipolar semiconductors; linear theory; nonequilibrium carriers; temperature gradient; thermo-emf; Charge carrier processes; Charge carriers; Circuits; Current density; Equations; Radiative recombination; Shape; Spontaneous emission; Temperature; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
Print_ISBN :
0-7803-7683-8
Type :
conf
DOI :
10.1109/ICT.2002.1190328
Filename :
1190328
Link To Document :
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