DocumentCode
3338384
Title
General approach to study thermo-e.m.f. generated by nonequilibrium carriers in bipolar semiconductors
Author
Gurevich, Yu.G. ; Lohvinov, Heorhiy ; Titov, Oleg ; Ortiz, Antonio
Author_Institution
Dept. de Fisica, CINVESTAV-IPN, Mexico City, Mexico
fYear
2002
fDate
25-29 Aug. 2002
Firstpage
314
Lastpage
316
Abstract
Linear theory of thermo-e.m.f. is developed for bipolar semiconductors. The role of nonequilibrium carriers of charge appearing due to the presence of the temperature gradient is investigated.
Keywords
semiconductor-metal boundaries; temperature distribution; thermoelectricity; bipolar semiconductors; linear theory; nonequilibrium carriers; temperature gradient; thermo-emf; Charge carrier processes; Charge carriers; Circuits; Current density; Equations; Radiative recombination; Shape; Spontaneous emission; Temperature; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
Print_ISBN
0-7803-7683-8
Type
conf
DOI
10.1109/ICT.2002.1190328
Filename
1190328
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