• DocumentCode
    3338400
  • Title

    Modeling the thermal conductivity of a SiGe segmented nanowire

  • Author

    Dames, Chris ; Chen, Gang

  • Author_Institution
    Dept. of Mech. Eng., MIT, Cambridge, MA, USA
  • fYear
    2002
  • fDate
    25-29 Aug. 2002
  • Firstpage
    317
  • Lastpage
    320
  • Abstract
    A Debye model is applied to a simple phonon radiation framework to predict the thermal conductivity of a SiGe segmented nanowire. A gray Matthiessen´s rule is used to account for bulk scattering while phonon confinement and wave effects are neglected. When either the diameter D or segment length L is smaller than the bulk phonon mean free path the effective thermal conductivity is reduced significantly. In particular, combining diffuse side walls with the diffuse mismatch interface condition at room temperature the alloy limit of 8.5 W/m-K is surpassed for L<15 nm or D <10 nm.
  • Keywords
    Debye temperature; Ge-Si alloys; electrical conductivity; nanowires; phonons; semiconductor materials; thermal conductivity; thermoelectricity; 10 nm; 15 nm; Debye model; SiGe; SiGe segmented nanowire; diffuse mismatch interface condition; gray Matthiessen´s rule; phonon radiation; thermal conductivity; Electromagnetic scattering; Germanium silicon alloys; Heat transfer; Nanostructures; Particle scattering; Phonons; Silicon germanium; Temperature distribution; Thermal conductivity; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
  • Print_ISBN
    0-7803-7683-8
  • Type

    conf

  • DOI
    10.1109/ICT.2002.1190329
  • Filename
    1190329