Title :
New approach for thermal investigation of a III – V power transistor
Author :
Fontaine, M. ; Joubert, E. ; Latry, O. ; Dherbecourt, P. ; Ketata, M.
Author_Institution :
LEMI, Univ. de Rouen, Rouen
Abstract :
In this paper is presented a new method for characterisation of temperature of AlGaN-GaN transistor. An ellipsometer is also explained for measure of refractive index and so propagation time constant.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; power transistors; AlGaN-GaN; III-V power transistor; refractive index; thermal investigation; Electric variables; Optical beams; Optical sensors; Optical surface waves; Power transistors; Raman scattering; Sensor arrays; Temperature measurement; Temperature sensors; Time measurement;
Conference_Titel :
Thermal Inveatigation of ICs and Systems, 2008. THERMINIC 2008. 14th International Workshop on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-3365-0
Electronic_ISBN :
978-2-35500-008-9
DOI :
10.1109/THERMINIC.2008.4669873
