DocumentCode
3339187
Title
Design and characterization of cold point thermoelectric coolers
Author
Ghoshal, Uttam
Author_Institution
Austin Res. Lab., IBM Res., Austin, TX, USA
fYear
2002
fDate
25-29 Aug. 2002
Firstpage
540
Lastpage
543
Abstract
We describe structured point-contact thermoelectric devices that confine the thermal gradients and electric fields at the boundaries of the cold end, and exploits the reduction of thermal conductivity at the interfaces, tunneling properties of point contacts, and the poor electron-phonon coupling at the junctions. We propose a theory of the structured cold point metal-semiconductor contacts and detail the design of cold point thermoelectric coolers. Temperature and electrical measurements of prototype cold point coolers using bismuth chalcogenides in vacuum indicate doubling of the thermoelectric figure-of-merit ZT values to the range of 1.4-1.7 at room temperature.
Keywords
cooling; point contacts; thermal conductivity; thermal management (packaging); thermoelectric devices; bismuth chalcogenides; cold point thermoelectric coolers; electron-phonon coupling; metal-semiconductor contacts; structured point-contact thermoelectric devices; thermal conductivity; thermal gradients; thermal management; thermoelectric figure-of-merit ZT values; tunneling properties; Bismuth; Contacts; Electric variables measurement; Prototypes; Temperature distribution; Temperature measurement; Thermal conductivity; Thermoelectric devices; Thermoelectricity; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
Print_ISBN
0-7803-7683-8
Type
conf
DOI
10.1109/ICT.2002.1190374
Filename
1190374
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