DocumentCode :
3339206
Title :
Low temperature thermoelectric modules
Author :
Hogan, T.P. ; Chung, D-Y. ; Lal, S. ; Guo, F. ; Loo, S. ; Cauchy, C.
Author_Institution :
Electr. & Comput. Eng. Dept., Michigan State Univ., East Lansing, MI, USA
fYear :
2002
fDate :
25-29 Aug. 2002
Firstpage :
544
Lastpage :
547
Abstract :
Optimization of modules based on the new low temperature thermoelectric material CsBi4Te6 has been investigated. These materials have shown very promising thermoelectric properties for cooling applications in the 100-300 K range, however doping and alloying optimization is essential toward developing high efficiency coolers. Progress in device fabrication through the investigation of contact resistances for various electrodes is reported.
Keywords :
caesium compounds; contact resistance; modules; thermoelectric devices; 100 to 300 K; CsBi4Te6; alloying optimization; contact resistances; cooling applications; device fabrication; doping; low temperature thermoelectric material; thermoelectric modules; Conducting materials; Cooling; Crystalline materials; Electrodes; Fabrication; Needles; Springs; Temperature; Thermal conductivity; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
Print_ISBN :
0-7803-7683-8
Type :
conf
DOI :
10.1109/ICT.2002.1190375
Filename :
1190375
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3339206
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