Title :
Rigorous simulation of InAlGaAs-InGaAs bulk and quantum well interband tunnel junctions for multi-junction solar cells
Author_Institution :
IEK5-Photovoltaik, Forschungszentrum Juelich, Julich, Germany
Abstract :
In this paper, rigorous numerical simulations of direct and phonon-assisted tunneling currents in InAlGaAs-InGaAs bulk and quantum well interband tunnel heterojunctions with applications in high-efficiency multi-junction solar cells are presented. The quantum-kinetic model reproduces experimentally observed features in the current-voltage characteristics of the devices, such as the pronounced current enhancement in the quantum well junction as compared to the bulk junction, and reveals at the same time the impact of quasi-bound states, electric fields and electron-phonon scattering on the interband tunneling current. Absorption losses induced by the quantum wells are assessed within the same theoretical framework and thus in consistency with the evaluation of the electronic properties.
Keywords :
III-V semiconductors; aluminium compounds; electric fields; gallium arsenide; indium compounds; quantum wells; solar cells; wide band gap semiconductors; InAlGaAs-InGaAs; absorption losses; bulk junction; bulk tunnel junctions; current-voltage characteristics; electric fields; electron-phonon scattering; electronic properties; high-efficiency multijunction solar cells; interband tunneling current; phonon-assisted tunneling currents; pronounced current enhancement; quantum well interband tunnel junctions; quantum-kinetic model; quasi-bound states; Absorption; Heterojunctions; Indium gallium arsenide; Photonics; Photovoltaic cells; Tunneling; heterojunctions; photovoltaic cells; quantum wells; tunneling;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744118