Exploiting a latchup circuit via commercial CMOS technologies

The stimulated ignition of latchup effects caused by external radiation has so far proven to be a hidden hazard. Here this effect is described as a novel approach to detect particles by means of a solid-state device susceptible to latchup effects. In addition, the device can also be used as a circuit for reading sensors´ signals, leaving the capability of sensing to external sensors. As the MOS transistors are widely used at present in microelectronics devices and sensors, this latchup-based cell is proposed as a novel structure for future applications in particle detection, amplification of sensors´ signals and radiation monitoring.