Performance and spectroscopic behaviour of DePFET macropixels

The combined Detector/Amplifier structure DePFET (Depleted P-channel Field Effect Transistor) features excellent energy resolution, low noise readout at high speed and low power consumption. This is combined with the possibility of random acessibility of pixels and on-demand readout. In addition it possesses all advantages of a sideways depleted device, i.e. 100% fill factor and very good quantum efficiency. Combining the DePFET structure with a silicon drift detector (SDD) like drift ring structure forms a so-called macropixel device which allows for large flexibility in terms of pixel size. All this makes DePFET macropixels a promising new building block for large area silicon radiation detector devices. In this paper, first results of qualifying measurements performed with a macropixel prototype are presented. The detector shows good linearity over the investigated energy range and no significant charge loss within the pixel area.