Dual approach for HBT thermal impedance

This paper presents a dual approach for a coherent determination and validation of HBT thermal impedance. This study relies both on an experimental characterization method and a 3D finite element simulation approach. The first section reminds briefly the experimental approach. The second section describes the 3D device modeling used for the physic-based thermal simulations. Thereafter, details on the reduction method used for the numerical computation of the thermal impedance are explained. The last section compares the final results and validates this dual approach for power HBTs.