DocumentCode
3339675
Title
New techniques in SOI pixel detector
Author
Arai, Yasuo
Author_Institution
Inst. of Particle & Nucl. Studies, High Energy Accel. Res. Organ., Tsukuba, Japan
fYear
2009
fDate
Oct. 24 2009-Nov. 1 2009
Firstpage
1161
Lastpage
1164
Abstract
A new techniques in a Silicon-on-Insulator (SOI) process for pixelated radiation detectors are developed. One is called buried p-well (BPW) to suppress back gate effect, and the other is vertical (3D) integration technology to achieve much higher density. Two types of pixel detectors, one integration-type and the other counting-type, are developed and tested. We confirmed good sensitivity for light, charged particles and X-rays for these detectors.
Keywords
nuclear electronics; silicon radiation detectors; BPW; SOI pixel detector; back gate effect; buried p-well; counting-type pixel detectors; integration-type pixel detectors; monolithic pixel detector; pixelated radiation detectors; silicon-on-insulator; vertical integration technology; Astrophysics; Biomedical imaging; Bonding; CMOS technology; Circuits; Image analysis; Radiation detectors; Semiconductor materials; Silicon on insulator technology; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE
Conference_Location
Orlando, FL
ISSN
1095-7863
Print_ISBN
978-1-4244-3961-4
Electronic_ISBN
1095-7863
Type
conf
DOI
10.1109/NSSMIC.2009.5402397
Filename
5402397
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