DocumentCode
3339932
Title
Electron spectroscopy of conduction electrons excited by visible light utilizing NEA surface
Author
Ichihashi, Fumiaki ; Shimura, Daisuke ; Nishitani, Kenji ; Kuwahara, Masashi ; Ito, Takao ; Harada, Shingo ; Tagawa, Masaki ; Ujihara, Toru
Author_Institution
Dept. of Mater. Sci. & Eng., Nagoya Univ., Nagoya, Japan
fYear
2013
fDate
16-21 June 2013
Abstract
In this paper we propose an angle-resolved photoemission spectroscopy to observe the conduction electrons emitted from a surface of negative electron affinity state. In actual, we have measured conduction electrons in a GaAs bulk crystal and obtained the electron dispersion around Γ point. In addition, we could also observe hot electrons excited by the light which energy was much larger than band gap energy. These results suggest that the method we proposed is one of the most powerful tools for the evaluation method of the conduction band.
Keywords
III-V semiconductors; electron spectroscopy; energy gap; gallium arsenide; hot carriers; photoelectron spectra; solar cells; GaAs; angle-resolved photoemission spectroscopy; band gap energy; bulk crystal; conduction electrons; electron dispersion; electron spectroscopy; intermediate-band solar cells; negative electron; visible light utilizing NEA surface; Gallium arsenide; Photoelectricity; Photovoltaic cells; Semiconductor device measurement; Spectroscopy; Surface cleaning; III-V compound semiconductor; intermediate-band solar cells; negative electron affinity surface; photoelectron spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/PVSC.2013.6744149
Filename
6744149
Link To Document