• DocumentCode
    3339932
  • Title

    Electron spectroscopy of conduction electrons excited by visible light utilizing NEA surface

  • Author

    Ichihashi, Fumiaki ; Shimura, Daisuke ; Nishitani, Kenji ; Kuwahara, Masashi ; Ito, Takao ; Harada, Shingo ; Tagawa, Masaki ; Ujihara, Toru

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nagoya Univ., Nagoya, Japan
  • fYear
    2013
  • fDate
    16-21 June 2013
  • Abstract
    In this paper we propose an angle-resolved photoemission spectroscopy to observe the conduction electrons emitted from a surface of negative electron affinity state. In actual, we have measured conduction electrons in a GaAs bulk crystal and obtained the electron dispersion around Γ point. In addition, we could also observe hot electrons excited by the light which energy was much larger than band gap energy. These results suggest that the method we proposed is one of the most powerful tools for the evaluation method of the conduction band.
  • Keywords
    III-V semiconductors; electron spectroscopy; energy gap; gallium arsenide; hot carriers; photoelectron spectra; solar cells; GaAs; angle-resolved photoemission spectroscopy; band gap energy; bulk crystal; conduction electrons; electron dispersion; electron spectroscopy; intermediate-band solar cells; negative electron; visible light utilizing NEA surface; Gallium arsenide; Photoelectricity; Photovoltaic cells; Semiconductor device measurement; Spectroscopy; Surface cleaning; III-V compound semiconductor; intermediate-band solar cells; negative electron affinity surface; photoelectron spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.2013.6744149
  • Filename
    6744149