DocumentCode :
3340003
Title :
ASIC for SDD-based X-ray spectrometers
Author :
Rehak, Pavel ; De Geronimo, Gianluigi ; Ackley, Kim ; Carini, Gabriella ; Chen, Wei ; Fried, Jack ; Keister, Jeffrey ; Li, Shaorui ; Li, Zheng ; Pinelli, Donald A. ; Siddons, D. Peter ; Vernon, Emerson ; Gaskin, Jessica A. ; Ramsey, Brian D. ; Tyson, Trev
Author_Institution :
Brookhaven Nat. Lab., Upton, NY, USA
fYear :
2009
fDate :
Oct. 24 2009-Nov. 1 2009
Firstpage :
1088
Lastpage :
1095
Abstract :
We present an application-specific integrated circuit (ASIC) for high-resolution x-ray spectrometers (XRS). The ASIC reads out signals from pixelated silicon drift detectors (SDDs). The pixel does not have an integrated field effect transistor (FET); rather, readout is accomplished by wire-bonding the anodes to the inputs of the ASIC. The ASIC dissipates 32 mW, and offers 16 channels of low-noise charge amplification, high-order shaping with baseline stabilization, discrimination, a novel pile-up rejector, and peak detection with an analog memory. The readout is sparse and based on custom low-power tristatable low-voltage differential signaling (LPT-LVDS). A unit of 64 SDD pixels, read out by four ASICs, covers an area of 12.8 cm2 and dissipates with the sensor biased about 15 mW/cml As a tile-based system, the 64-pixel units cover a large detection area. Our preliminary measurements show a FWHM of 145 eV at the 5.9 keV peak of a 55Fe source, and less than 80 eV on a test-pulse line at 200 eV.
Keywords :
X-ray spectrometers; analogue storage; application specific integrated circuits; readout electronics; silicon radiation detectors; 55Fe source; ASIC reads out signals; FWHM; SDD-based X-ray spectrometers; analog memory; application-specific integrated circuit; baseline stabilization; detection area; integrated field effect transistor; low-noise charge amplification; low-power tristatable low-voltage differential signaling; peak detection; pile-up rejector; pixelated silicon drift detectors; test-pulse line; tile-based system; Analog memory; Anodes; Application specific integrated circuits; Detectors; FETs; Iron; Sensor systems; Silicon; Spectroscopy; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE
Conference_Location :
Orlando, FL
ISSN :
1095-7863
Print_ISBN :
978-1-4244-3961-4
Electronic_ISBN :
1095-7863
Type :
conf
DOI :
10.1109/NSSMIC.2009.5402415
Filename :
5402415
Link To Document :
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