Title :
Modeling of switched current memory cell with VHDL-AMS for mixed system design
Author :
Ksentini, N. ; Loulou, M. ; Fakhfakh, A. ; Nehme, A. ; Masmoudi, N. ; Charlot, J.-J.
Author_Institution :
Lab. d´´Electronique et des Technol. de l´´Inf., Ecole Nationale d´´Ingenieurs Sfax Tunisia, Tunisia
Abstract :
In this paper, we present a method for modeling a second generation class-A SI memory cells using VHDL-AMS. The developed behavioral model is based on simplified physical models of phenomenon occurring during the operating phases of the SI cell. It is designed to be simulated in the time domain and it is used to develop behavioral models of an SI integrator and sigma-delta modulator.
Keywords :
analogue storage; circuit analysis computing; mixed analogue-digital integrated circuits; switched current circuits; transfer functions; transient response; SI integrator; SI memory cell modeling; VHDL-AMS; behavioral model; mixed system design; second generation class-A SI memory cells; sigma-delta modulator; switched current memory cell; time domain simulation; Analog integrated circuits; Circuit simulation; Clocks; Delta-sigma modulation; Frequency; MOSFETs; Runtime; Signal processing; Switching circuits; Transient response;
Conference_Titel :
Mixed-Signal Design, 2003. Southwest Symposium on
Print_ISBN :
0-7803-7778-8
DOI :
10.1109/SSMSD.2003.1190417
