DocumentCode
3340193
Title
A high-speed dynamic current sensor for iDD test based on the flipped voltage follower
Author
Ducoudray, Gladys Omayra ; González-Carvajal, Ramon ; Ramirez-Angulo, Jaime
Author_Institution
New Mexico State Univ., Las Cruces, NM, USA
fYear
2003
fDate
23-25 Feb. 2003
Firstpage
208
Lastpage
211
Abstract
This paper proposes the use of the flipped voltage follower as a high speed current sensor for iDD current testing. Simulations in 0.18 μm CMOS technology, as well as experimental results from a breadboard prototype are provided that verify functionality and the potential for high gain-bandwidth of the proposed circuit.
Keywords
CMOS integrated circuits; electric current measurement; electric sensing devices; integrated circuit testing; mixed analogue-digital integrated circuits; 0.18 micron; CMOS technology; flipped voltage follower; high-speed dynamic current sensor; iDD current testing; low-voltage current sensor; mixed-signal circuit testing; Bandwidth; CMOS technology; Circuit simulation; Circuit testing; Current supplies; Impedance; Low voltage; Mirrors; Rails; Resistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed-Signal Design, 2003. Southwest Symposium on
Print_ISBN
0-7803-7778-8
Type
conf
DOI
10.1109/SSMSD.2003.1190428
Filename
1190428
Link To Document