DocumentCode
3340627
Title
Fabrication of Cu2 ZnSnSe4 thin-films by a two-stage (2SSS) process
Author
Wang, Yannan ; Sun, Sen ; Xiao Li ; Ferekides, Chris S. ; Morel, Don L.
Author_Institution
Univ. of South Florida, Tampa, FL, USA
fYear
2013
fDate
16-21 June 2013
Abstract
Cu2ZnSnSe4 thin-films have been produced by a two-stage (2SSS) growth process, at annealing temperatures of 400°C-500°C, with different compositions of metallic precursors/Se, in order to reduce the major secondary phases ZnSe and CuxSey. Raman scattering is used to determine the phases in the thin-films. Under proper preparation conditions CZTSe modes are found to dominate, while the common secondary phase ZnSe is not detected.
Keywords
Raman spectra; annealing; copper compounds; semiconductor growth; semiconductor thin films; ternary semiconductors; tin compounds; zinc compounds; Cu2ZnSnSe4; Raman scattering; annealing temperatures; metallic precursors; secondary phase; temperature 400 degC to 500 degC; thin-film fabrication; two-stage growth process; Annealing; Optical device fabrication; Optical films; Photovoltaic cells; Tin; Zinc; Cu2 ZnSnSe4 ; Raman spectroscopy; kesterite; optical model; photovoltaic cells;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/PVSC.2013.6744185
Filename
6744185
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