Circular geometry mos transistor analysis of SOI substrates for high energy physics particle detectors

SOI substrates are important for the fabrication of monolithic active pixel high energy physics particle detectors. In this work, self-aligned circular geometry MOS transistor test structures were fabricated on ion split, bonded SOI substrates to evaluate the interface between the high resistivity handle silicon and the SOI buried oxide. Pre- and post- proton irradiation transistor measurements are presented, showing an increased SOI buried oxide trapped charge of only 3.45times10¹¹ cm^-2 for a dose of 2.7 Mrad.