DocumentCode
3340777
Title
New method for non destructive snap-back characterization in multi-finger power MOSFETs
Author
Dieudonné, François ; Constant, Aurore ; Rosa, Julien ; Gautheron, Benoit ; Revel, Jean-François
Author_Institution
STMicroelectronics, Crolles
fYear
2008
fDate
24-27 March 2008
Firstpage
137
Lastpage
141
Abstract
A non destructive conductance-based electrical characterization method of the snap-back phenomenon has been implemented to investigate multi-finger power MOSFETs. The context of our study is presented, then the specific test structures and the measurement methodology are shown. The robustness and repeatability of our approach is demonstrated on a variety of power MOSFETs regarding to some technological parameters. Comparisons between our results and the ones issued from a destructive characterization are also drawn. The temperature´s influence on snap-back is evidenced as well as the measurement´s repeatability.
Keywords
power MOSFET; electrical characterization; multifinger power MOSFET; nondestructive snap-back characterization; MOSFETs; Microelectronics; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2008. ICMTS 2008. IEEE International Conference on
Conference_Location
Edinburgh
Print_ISBN
978-1-4244-1800-8
Electronic_ISBN
978-1-4244-1801-5
Type
conf
DOI
10.1109/ICMTS.2008.4509328
Filename
4509328
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