DocumentCode :
3340795
Title :
X-ray failure analysis techniques
Author :
Shannon, J. ; Grady, B. ; Jones, M. ; Portillo, S.
Author_Institution :
Directed Energy Div., Pulsed Power & RF Syst. Branch, Dahlgren, VA, USA
fYear :
2010
fDate :
20-24 Sept. 2010
Firstpage :
737
Lastpage :
740
Abstract :
While most organizations in the High Power Microwave and Electromagnetic Pulse (HPM/EMP) community want to know “Can I effect that device?” this paper will help answer the complicated and ever-growing question “How did I effect that device?” Using the Metris XT V 160 X-ray Inspection machine, techniques for detecting physical effects of HPM sources on circuit components have been developed. Effects that can be detected range from evaporated wire bonds within an Integrated Circuit (IC) package to damaged traces on an IC Die. The non-perturbing techniques developed can save valuable time and money in the failure analysis community, and provide HPM source developers with data to help with the next generation of HPM weapons.
Keywords :
X-ray analysis; X-ray imaging; electromagnetic pulse; integrated circuit packaging; HPM weapons; HPM-EMP; IC package; Metris XT V 160 X-ray inspection machine; X-ray failure analysis techniques; failure analysis community; high power microwave-electromagnetic pulse; integrated circuit; Communities; Failure analysis; Integrated circuits; Manufacturing; Microwave circuits; Microwave imaging; Wire; Failure analysis; Semiconductor defects; X-ray imaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetics in Advanced Applications (ICEAA), 2010 International Conference on
Conference_Location :
Sydney, NSW
Print_ISBN :
978-1-4244-7366-3
Type :
conf
DOI :
10.1109/ICEAA.2010.5651894
Filename :
5651894
Link To Document :
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