Characterization of MOSFETs intrinsic performance using in-wafer advanced Kelvin-contact device structure for high performance CMOS LSIs

In this work, a new MOSFETs characterization method utilizing in-wafer Kelvin contact device structure is developed. The developed method can eliminate the parasitic series resistances in MOSFETs and allows us to characterize the short channel transistor intrinsic current- voltage characteristics as well as the quantitative effects of the parasitic series resistance to the device performance, very stably and accurately. The developed analysis is useful for the characterization and parameter extractions of fabricated MOSFETs for the device/process development and optimization of ultra-thin gate insulator short channel CMOS LSIs for higher performance.