New Y-function-based methodology for accurate extraction of electrical parameters on nano-scaled MOSFETs

We developed a new Y-function-based extraction methodology to overcome the difficulties encountered by applying the conventional techniques. Our method relies on a robust recursive algorithm which requires a limited number of input parameters on which the results have a weak dependence, and so an increased reliability. The obtained results are in line with the previous methods, but show an improved accuracy. Finally, parameter extraction performed through this technique has provided accurate and reliable results over a large range of MOSFET architectures.