DocumentCode
3340953
Title
A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances
Author
Stavitski, N. A M ; Klootwijk, J.H. ; van Zeijl, H.W. ; Kovalgin, A.Y. ; Wolters, R.A.M.
Author_Institution
Inst. for Nanotechnol., Univ. of Twente, Enschede
fYear
2008
fDate
24-27 March 2008
Firstpage
199
Lastpage
204
Abstract
The parasitic factors that strongly influence the measurement accuracy of cross-bridge Kelvin resistor (CBKR) structures for low specific contact resistances (pc) have been extensively discussed during last few decades and the minimum of the pc value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally. As a result, a model was developed to account for the actual current flow and a method for reliable pc extraction was created. It was found that in our case of metal-to- metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.
Keywords
contact resistance; resistors; cross-bridge Kelvin resistor; current flow; low contact resistance; metal sheet resistance; parasitic factor; Electrical resistance measurement; Kelvin; Microelectronics; Resistors; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2008. ICMTS 2008. IEEE International Conference on
Conference_Location
Edinburgh
Print_ISBN
978-1-4244-1800-8
Electronic_ISBN
978-1-4244-1801-5
Type
conf
DOI
10.1109/ICMTS.2008.4509338
Filename
4509338
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