Title :
A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances
Author :
Stavitski, N. A M ; Klootwijk, J.H. ; van Zeijl, H.W. ; Kovalgin, A.Y. ; Wolters, R.A.M.
Author_Institution :
Inst. for Nanotechnol., Univ. of Twente, Enschede
Abstract :
The parasitic factors that strongly influence the measurement accuracy of cross-bridge Kelvin resistor (CBKR) structures for low specific contact resistances (pc) have been extensively discussed during last few decades and the minimum of the pc value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally. As a result, a model was developed to account for the actual current flow and a method for reliable pc extraction was created. It was found that in our case of metal-to- metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.
Keywords :
contact resistance; resistors; cross-bridge Kelvin resistor; current flow; low contact resistance; metal sheet resistance; parasitic factor; Electrical resistance measurement; Kelvin; Microelectronics; Resistors; Testing;
Conference_Titel :
Microelectronic Test Structures, 2008. ICMTS 2008. IEEE International Conference on
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-1800-8
Electronic_ISBN :
978-1-4244-1801-5
DOI :
10.1109/ICMTS.2008.4509338